Samsung Electronics reportedly achieves over 80% yield for 1c DRAM and nearly 60% yield for HBM4

Glonghui, February 25th｜According to Sci-Tech Innovation Board Daily, industry insiders revealed that Samsung Electronics has achieved an 80% yield rate for 1c DRAM internally, which is the highest yield rate obtained under high-temperature conditions (thermal testing). In the fourth quarter of 2025, its yield rate was about 60-70%, but it has now improved significantly and is expected to reach around 90% by May. Industry insiders further stated that the yield rate of Samsung's HBM4 based on 1c DRAM has also increased, approaching 60%, compared to about 50% in the fourth quarter of last year.