Samsung Electronics reportedly to halt production of 2D NAND flash memory, original production lines to be used for 1c nm DRAM manufacturing
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Glonghui, February 26|According to TheElec, Samsung Electronics will stop manufacturing 2D NAND flash memory at Line 12 of its Hwaseong campus as early as March this year, officially marking the end of the company's 2D NAND flash era. Samsung Electronics achieved mass production of 3D NAND (V-NAND) as early as 2013, but the company retained a small-scale 2D NAND production capacity to meet the needs of special niche markets. In the future, Hwaseong Line 12 will be used for 1c nm DRAM memory manufacturing, responsible for backend metal wiring and surface treatment processes.
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